MULTILAYERED PERIODICAL STRUCTURES WITH ELASTICALLY STRAINED GESISN LAYERS AND GESISN NANOISLANDS

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram dat...

Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys

Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed because of the high electron drift mobility, while the SiGeSn system can be constructed using CMOS...

Relaxation mechanisms in strained nanoislands.

The new mechanism for relaxation of misfit stresses in nanoislands (quantum dots) is suggested and theoretically examined which is the formation of partial misfit dislocations. The parameters of nanoislands are estimated at which the generation of partial misfit dislocations is energetically favorable, with emphasis on the case of Ge/Si nanoislands. Different dislocation structures are shown to...

Corrigendum: Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys

(,) 2 1 () () g in cn E E E E E E cn g in p h c n g in ph 1 2 7/2 , 1/2 2 2 () ()() 2 1/2 2 1 2 , 2 2 1 2 , 2 g in p h p h g in ph g in (,) 2 1 () () g in cn E E E E E E cn g in p h c n g in ph 1 2 7/2 , 1/2 2 2 () () 2 1/2 2 1 2 , 2 2 1 2 , 2 g in p h p h g in ph g in 1 2 , 3/2 1 2 , 1 2 , In Equation 14, ω ω π ω ω ω ω (,) 2 1 () () g in cn E E E E E E cn g in p h c n g in ph 1 2 7/2 , 1/2 2 2...

Equilibrium shape and dislocation nucleation in strained epitaxial nanoislands